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  document number: 91209 www.vishay.com s11-0445-rev. b, 21-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet IRFP23N50L, sihfp23n50l vishay siliconix features ? superfast body diode eliminates the need for external diodes in zvs applications ? lower gate charge results in simpler drive requirements ? enhanced dv/dt capabilitie s offer improved ruggedness ? higher gate voltage threshold offers improved noise immunity ? compliant to rohs directive 2002/95/ec applications ? zero voltage switching smps ? telecom and server power supplies ? uninterruptible power supplies ? motor control applications notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. starting t j = 25 c, l = 1.5 mh, r g = 25 ? , i as = 23 a (see fig. 12). c. i sd ? 23 a, di/dt ? 650 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. product summary v ds (v) 500 r ds(on) ( ? )v gs = 10 v 0.190 q g (max.) (nc) 150 q gs (nc) 44 q gd (nc) 72 configuration single n-channel mosfet g d s to-247ac g d s available rohs* compliant ordering information package to-247ac lead (pb)-free IRFP23N50Lpbf sihfp23n50l-e3 snpb IRFP23N50L sihfp23n50l absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 23 a t c = 100 c 15 pulsed drain current a i dm 92 linear derating factor 2.9 w/c single pulse avalanche energy b e as 410 mj repetitive avalanche current a i ar 23 a repetitive avalanche energy a e ar 37 mj maximum power dissipation t c = 25 c p d 370 w peak diode recovery dv/dt c dv/dt 21 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91209 2 s11-0445-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising fom 0 % to 80 % v ds . d. c oss eff. (er) is a fixed capacitance that stores the same energy time as c oss while v ds is rising fom 0 % to 80 % v ds . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -40 c/w case-to-sink, flat, greased surface r thcs 0.24 - maximum junction-to-case (drain) r thjc -0.34 specifications (t j = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma d -0.27-v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 50 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 2.0 ma drain-source on-state resistance r ds(on) v gs = 10 v i d = 14 a b - 0.190 0.235 ? forward transconductance g fs v ds = 50 v, i d = 14 a b 12 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 3600 - pf output capacitance c oss - 380 - reverse transfer capacitance c rss -37- output capacitance c oss v gs = 0 v v ds = 1.0 v , f = 1.0 mhz - 4800 - v ds = 400 v , f = 1.0 mhz - 100 - effective output capacitance c oss eff. v ds = 0 v to 400 v c - 220 - effective output capacitance (energy related) c oss eff. (er) v ds = 0 v to 400 v d - 160 - internal gate resistance r g f = 1 mhz, open drain - 1.2 - ? total gate charge q g v gs = 10 v i d = 23 a, v ds = 400 v see fig. 6 and 13 b - - 150 nc gate-source charge q gs --44 gate-drain charge q gd --72 turn-on delay time t d(on) v dd = 250 v, i d = 23 a r g = 6.0, v gs = 10 v see fig. 10 b -26- ns rise time t r -94- turn-off delay time t d(off) -53- fall time t f -45- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --23 a pulsed diode forward current a i sm --92 body diode voltage v sd t j = 25 c, i s = 14 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c i f = 23 a, di/dt = 100 a/s b - 170 250 ns t j = 125 c - 220 330 body diode reverse recovery charge q rr t j = 25 c - 560 840 c t j =1 25 c - 980 1500 reverse recovery current i rrm t j = 25 c - 7.6 11 a forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) s d g
document number: 91209 www.vishay.com s11-0445-rev. b, 21-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain-to-sour ce cur rent (a) 4.5 v 20s pulse width tj = 25 c v ds , drain-to-source voltage (v) top 15v vgs 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 10 100 0.1 10 100 20s pulse width tj = 150 c v ds , drain-to-source voltage (v) 1 1 i d , drain-to-source current (a) 4,5 v top 15v vgs 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 1.0 6.0 11.0 16.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , drain-to source current (a) t j = 25 c t j = 150 c 20 s pulse width t j = 150c -60 -40 -20 0 20 40 60 80 100 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d = 23 a v gs = 10 v 120 t j , junction temperature (c) r ds(on) , drain-to-source on resistance (normalized)
www.vishay.com document number: 91209 4 s11-0445-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - maximum safe operating area fig. 8 - typical gate charge vs. gate-to-source voltage 1 10 100 1000 10 100 1000 10000 100000 c, capacitance (pf) v ds , drain-to-source voltage (v) v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd ciss coss crss 0 v ds , drain-to-source voltage (v) 0 5 10 15 20 25 energy (j ) 100 200 300 400 500 600 operation in this area limited 1000 100 10 1 10 100 1000 10000 t c = 25 c v ds , drain-to-source voltage (v) i d , drain current (a) by r ds(on) 10us 100us 1ms 10ms t j = 150 c single pulse 24 0 2 5 7 10 12 048 72 96 120 v gs , gate-to-source voltage (v) q g , total gate charge (nc) i d = 23 v ds = 400 v v ds = 250 v v ds = 100 v
document number: 91209 www.vishay.com s11-0445-rev. b, 21-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix fig. 9 - typical source-drain diode forward voltage fig. 10 - maximum drain curre nt vs. case temperature fig. 11a - switching time test circuit fig. 11b - switching time waveforms fig. 12 - maximum effective transient thermal impedance, junction-to-case 0.0 0.10 1.00 10.00 100.00 0.5 1.0 1.5 2.0 i sd , reverse drain current (a) v sd , source-to-drain voltage (v) t j = 150 c t j = 25 c v gs = 0 v 50 75 100 150 0 5 10 15 20 25 25 125 i d , drain current (a) t c , case temperature (c) pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 thermal response (z thjc ) t 1 , rectangular pulse duration (sec) d = 0.50 0.20 0.10 0.05 0.02 0.01 single pulse (thermal response) notes: 1. duty factor d = t 1 / t 2 2. peakt j = p dm x z thjc + t c p dm t 1 t 2
www.vishay.com document number: 91209 6 s11-0445-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix fig. 13 - threshold voltage vs. temperature fig. 14 - maximum avalanche energy s. drain current fig. 15a - unclamped inductive test circuit fig. 15b - unclamped inductive waveforms fig. 16a - gate charge test circuit fig. 16b - basic ga te charge waveform - 75 - 50 - 25 0 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 150 i d = 250 a v gs(th) gate threshold voltage (v) t j , temperature (c) 0 150 300 450 600 750 25 50 75 100 125 150 e as , single pulse avalanche energy (mj) starting t , junction temperature (c) i d top 10a 15a bottom 23a r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15 v 20 v i as v ds t p d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - q gs q gd q g v g charge 10 v
document number: 91209 www.vishay.com s11-0445-rev. b, 21-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP23N50L, sihfp23n50l vishay siliconix fig. 17 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91209 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
package information www.vishay.com vishay siliconix revision: 01-jul-13 1 document number: 91360 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac (high voltage) notes 1. dimensioning and tolera ncing per asme y14.5m-1994. 2. contour of slot optional. 3. dimension d and e do not include mold fl ash. mold flash shall not ex ceed 0.127 mm (0.005") per side . these dimens ions are mea sured at the outermost extremes of the plastic body. 4. thermal pad contour optional with dimensions d1 and e1. 5. lead finish un controlled in l1. 6. ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. outline conforms to jedec outline to-247 with exceptio n of dimension c. 8. xian and mingxin actually photo. millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.58 5.31 0.180 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 a2 1.17 2.49 0.046 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.53 2.39 0.060 0.094 l 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 l1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 n 7.62 bsc 0.300 bsc b5 2.59 3.38 0.102 0.133 ? p 3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.82 0.776 0.820 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - s 5.51 bsc 0.217 bsc ecn: x13-0103-rev. d, 01-jul-13 dwg: 5971 0.10 a c m m e e/2 (2) (4) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c l1 1 2 3 q d a a2 a a a1 c ? k b d m m a ?p (datum b) ?p1 d1 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting 4 3 5 7 4 4 4 lead assignments 1. gate 2. drain 3. source 4. drain
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.


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